2SK3667 Selling Leads, Price trend, 2SK3667 DataSheet download, circuit diagram from SeekIC.com

Application• Low drain-source ON resistance: R DS (ON) = 0.75 (typ.)• High forward transfer admittance: |Yfs| = 5.5S (typ.)• Low leakage current: IDSS = 100A (VDS = 600 V)• Enhancement mode: V th = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)Specifications Characteristics Symb...

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SeekIC No. : 004226822 Detail

2SK3667: Application• Low drain-source ON resistance: R DS (ON) = 0.75 (typ.)• High forward transfer admittance: |Yfs| = 5.5S (typ.)• Low leakage current: IDSS = 100A (VDS = 600 V)• E...

2SK3667 Data Sheet

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Part Number:: 2SK3667
Supply Ability:: 5000

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Upload time: 2025/12/31

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Product Details

Description

Application

• Low drain-source ON resistance: R_{DS (ON)} = 0.75 (typ.)
• High forward transfer admittance: |Yfs| = 5.5S (typ.)
• Low leakage current: I_DSS = 100A (V_DS = 600 V)
• Enhancement mode: V _th= 2.0~4.0 V (V_DS = 10 V, I_D= 1 mA)

Specifications

Characteristics		Symbol	Rating	Unit
Drain-source voltage		V_DSS	600	V
Drain-gate voltage (RGS = 20 k)		V_DGR	600	V
Gate-source voltage		V_GSS	±30	V
Drain current	DC (Note 1)	I_D	7.5	A
Drain current	Pulse (t = 1 ms) (Note 1)	I_DP	30	A
Drain power dissipation (Tc = 25°C)		P_D	45	W
Single pulse avalanche energy (Note 2)		E_AS	189	mJ
Avalanche current		I_AR	7.5	A
Repetitive avalanche energy (Note 3)		E_AR	4.5	mJ
Channel temperature		T_ch	150	°C
Storage temperature range		T_stg	-55~150	°C

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2SK3667

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