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2SK3668

Features: • Low gate charge QG = 26 nC TYP. (VDD = 320 V, VGS = 10 V, ID = 10 A)• Gate voltage rating: ±30 V• Low on-state resistance RDS(on) = 0.55 MAX. (VGS = 10 V, ID = 5.0 A)• Surface mount package availableSpecifications PARAMETER SYMBOL RATING UNIT ...

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SeekIC No. : 004226824 Detail

2SK3668: Features: • Low gate charge QG = 26 nC TYP. (VDD = 320 V, VGS = 10 V, ID = 10 A)• Gate voltage rating: ±30 V• Low on-state resistance RDS(on) = 0.55 MAX. (VGS = 10 V, ID = 5.0 A)&...

2SK3668 Data Sheet

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Part Number:
2SK3668
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Low gate charge
   QG = 26 nC TYP. (VDD = 320 V, VGS = 10 V, ID = 10 A)
• Gate voltage rating: ±30 V
• Low on-state resistance
   RDS(on) = 0.55 MAX. (VGS = 10 V, ID = 5.0 A)
• Surface mount package available


Specifications

PARAMETER
SYMBOL
RATING

UNIT

Drain to source voltage (VGS = 0 V)
VDSS
400
V
Gate to source voltage(VDS = 0 V)
VGSS
±30
V
Drain current(DC)
ID(DC)
±10
A
Drain peak current(Pulse)1
ID(pulse)
±34
A
Total Power Dissipation (TA = 25°C)
PT1
1.5
W
Total Power Dissipation (TC = 25°C)
PT2
100
W
Channel temperature
Tch
150
Storage temperature
Tstg
-55to+150
Single Avalanche Current 2
IAS
10
A
Single Avalanche Energy 2
EAS
8
mJ
Notes 1. PW 10 s, Duty Cycle 1%
          2. Starting Tch = 25°C, VDD = 150 V, RG = 25 , VGS = 20 0 V, L = 100 H


Description

The 2SK3668 is N-channel DMOS FET device that features a low on-state resistance, low charge and excellent switching characteristics, designed for high voltage applications such as high intensity discharge lamp drive.




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