DescriptionThe 2SK368-Y is one member of the 2SK368 family which is designed as the field effect transistor that can be used in audio frequency and high voltage amplifier applications and constant current applications. Features of the 2SK368-Y are:(1)High breakdown voltage: VGDS = -100 V (min); (...
2SK368-Y: DescriptionThe 2SK368-Y is one member of the 2SK368 family which is designed as the field effect transistor that can be used in audio frequency and high voltage amplifier applications and constant c...
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The 2SK368-Y is one member of the 2SK368 family which is designed as the field effect transistor that can be used in audio frequency and high voltage amplifier applications and constant current applications.
Features of the 2SK368-Y are:(1)High breakdown voltage: VGDS = -100 V (min); (2)High input impedance: IGSS = -1.0 nA (max) (VGS = -80 V); (3)Small package. The absolute maximum ratings of the 2SK368-Y can be summarized as:(1)Gate-drain voltage: -100 V;(2)Gate current: 10 mA;(3)Drain power dissipation: 150 mW;(4)Junction temperature: 125 °C;(5)Storage temperature range: -55 to 125 °C.
The electrical characteristics (Ta = 25°C) of the 2SK368-Y can be summarized as:(1)Gate cut-off current: -1.0 nA;(2)Gate-drain breakdown voltage: -100 V;(3)Drain current: 0.6 to 6.5 mA;(4)Gate-source cut-off voltage: -0.4 to -3.5 V;(5)Forward transfer admittance: 1.5 to 4.6 mS;(6)Input capacitance:13 pF;(7)Reverse transfer capacitance: 3 pF;(8)Noise figure: 0.5 dB. If you want to know more information such as the electrical characteristics about the 2SK368-Y, please download the datasheet in www.seekic.com or www.chinaicmart.com .