MOSFET HIGH-VOLTAGE POWER MOSFET
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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 1.5 KV | ||
| Gate-Source Breakdown Voltage : | 20 V | Continuous Drain Current : | 4 A | ||
| Resistance Drain-Source RDS (on) : | 5 Ohms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
| Package / Case : | TO-3PML | Packaging : | Tray |

| Absolute maximum ratings | |
|---|---|
| VDSS [V] | 1500 |
| VGSS [V] | 20 |
| ID [A] | 4 |
| PD [W] | 65
Tc=25°C |
| Electrical characteristics | |
|---|---|
| RDS(on) typ [] VGS=10V ID [A]=2 |
5 |
| VGS(off) min [V] | 2.5 |
| VGS(off) max [V] | 3.5 |
| |yfs| typ [S] | 2.8 |
| Ciss typ [pF] | 790 |
| Qg typ [nC] | 80 |
| Unit | ||||
| ・ | VDSS | 1500 | V | |
| ・ | VGSS | ±20 | V | |
| (DC) | ID | 4 | A | |
| () | IDP | PW10ms, duty cycle1% | 8 | A |
| PD | 3.0 | W | ||
|
Tc=25 |
65 | W | ||
| Tch | 150 | |||
| Tstg | -55 to +150 | |||
| ()*1 | EAS | 170 | mJ | |
| *2 | IAV | 4 | A |