2SK3767 Selling Leads, Price trend, 2SK3767 DataSheet download, circuit diagram from SeekIC.com

Features: Application• Low drain-source ON resistance: RDS (ON) = 3.3 (typ.)• High forward transfer admittance: |Yfs| = 1.6S (typ.)• Low leakage current: IDSS = 100A (VDS = 600 V)• Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)Specifications Characteristics ...

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SeekIC No. : 004226877 Detail

2SK3767: Features: Application• Low drain-source ON resistance: RDS (ON) = 3.3 (typ.)• High forward transfer admittance: |Yfs| = 1.6S (typ.)• Low leakage current: IDSS = 100A (VDS = 600 V)&...

2SK3767 Data Sheet

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Part Number:: 2SK3767
Supply Ability:: 5000

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1~5000

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Upload time: 2024/5/8

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Product Details

Description

Features:

Application

• Low drain-source ON resistance: R_{DS (ON)} = 3.3 (typ.)
• High forward transfer admittance: |Y_fs| = 1.6S (typ.)
• Low leakage current: I_DSS = 100A (V_DS= 600 V)
• Enhancement mode: V_th= 2.0 to 4.0 V (V_DS= 10 V, I_D = 1 mA)

Specifications

Characteristics		Symbol	Ratings	Unit
Drain-source voltage		V_DSS	600	V
Drain-gate voltage (R_GS=20k)		V_DGR	600	V
Gate?source voltage		V_GSS	±30	V
Drain current	DC (Note1)	I_D	2	A
Drain current	Pulse (Note1)	I_DP	5	A
Drain power dissipation (Tc=25)		P_D	25	W
Single pulse avalanche energy (Note 2)		E_AS	93	mJ
Avalanche current		I_AR	2	A
Repetitive avalanche energy (Note 3)		E_AR	4	mJ
Channel temperature		T_ch	150
Storage temperature range		T_stg	-55 ~ +150

Description

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2SK3767

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