2SK3811

Features: • Super low on-state resistanceRDS(on) = 1.8 m MAX. (VGS = 10 V, ID = 55 A)• High Current Rating: ID(DC) = ±110 ASpecifications Drain to Source Voltage (VGS = 0 V)Gate to Source Voltage (VDS = 0 V)Drain Current (DC) (TC = 25)Drain Current (pulse) Note1Total Power Dissipatio...

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2SK3811 Picture
SeekIC No. : 004226892 Detail

2SK3811: Features: • Super low on-state resistanceRDS(on) = 1.8 m MAX. (VGS = 10 V, ID = 55 A)• High Current Rating: ID(DC) = ±110 ASpecifications Drain to Source Voltage (VGS = 0 V)Gate to Sou...

floor Price/Ceiling Price

Part Number:
2SK3811
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/9

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Product Details

Description



Features:

• Super low on-state resistance
RDS(on) = 1.8 m MAX. (VGS = 10 V, ID = 55 A)
• High Current Rating: ID(DC) = ±110 A





Specifications

Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25)
Drain Current (pulse) Note1
Total Power Dissipation (TC = 25)
Total Power Dissipation (TA = 25)
Channel Temperature
Storage Temperature
Single Avalanche Energy Note2
Repetitive Avalanche Current Note3
Repetitive Avalanche Energy Note3
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
Tch
Tstg
EAS
IAR
EAR
40
±20
±110
±440
213
1.5
150
−55 to +150
518
72
518
V
V
A
A
W
W


mJ
A
mJ
Notes 1. PW 10 s, Duty Cycle 1%
2. Starting Tch = 25, VDD = 20 V, RG = 25 , VGS = 20 0 V, L = 100 H
3. RG = 25 , Tch(peak) 150





Description

The 2SK3811 is N-channel MOS Field Effect Transistor designed for high current switching applications.




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