2SK3812 Selling Leads, Price trend, 2SK3812 DataSheet download, circuit diagram from SeekIC.com

Features: • Super low on-state resistanceRDS(on)1 = 2.8 m MAX. (VGS = 10 V, ID = 55 A)RDS(on)2 = 3.7 m MAX. (VGS = 4.5 V, ID = 55 A)• High current rating: ID(DC) = ±110 ASpecifications Drain to Source Voltage (VGS = 0 V)Gate to Source Voltage (VDS = 0 V)Drain Current (DC) (TC = 25)Dr...

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SeekIC No. : 004226893 Detail

2SK3812: Features: • Super low on-state resistanceRDS(on)1 = 2.8 m MAX. (VGS = 10 V, ID = 55 A)RDS(on)2 = 3.7 m MAX. (VGS = 4.5 V, ID = 55 A)• High current rating: ID(DC) = ±110 ASpecifications ...

2SK3812 Data Sheet

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Part Number:: 2SK3812
Supply Ability:: 5000

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Upload time: 2026/1/10

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Product Details

Description

Features:

• Super low on-state resistance
R_DS(on)1 = 2.8 m MAX. (V_GS = 10 V, I_D = 55 A)
R_DS(on)2 = 3.7 m MAX. (V_GS = 4.5 V, I_D = 55 A)
• High current rating: I_D(DC) = ±110 A

Specifications

Drain to Source Voltage (V_GS= 0 V)
Gate to Source Voltage (V_DS = 0 V)
Drain Current (DC) (T_C = 25)
Drain Current (pulse) ^Note1Total Power Dissipation (T_C = 25)
Total Power Dissipation (T_A= 25)
Channel Temperature
Storage Temperature
Single Avalanche Energy ^Note2Repetitive Avalanche Current ^Note3Repetitive Avalanche Energy ^Note3

V_DSS
V_GSSI_D(DC)
I_D(pulse)P_T1
P_T2
T_ch
T_stgE_AS
I_AR
E_AR

60
±20
±110
±440
213
1.5
150
−55 to +150
397
63
397

V
V
A
A
W
W

mJ
A
mJ

Notes 1. PW 10 s, Duty Cycle 1%
2. Starting Tch = 25, V_DD = 20 V, R_G = 25 , V_GS = 20 0 V, L = 100 H
3. T_ch(peak) 150, RG = 25

Description

The 2SK3812 is N-channel MOS Field Effect Transistor designed for high current switching applications.

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2SK3812

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