Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25° C: 40A
Mounting Type: Through Hole
Package / Case: TO-220-3
Input Capacitance (Ciss) @ Vds: 4200pF @ 20V
Packaging: Bulk
Gate Charge (Qg) @ Vgs: 79nC @ 10V
Power - Max: 1.75W
Supplier Device Package: TO-220
Manufacturer: ON Semiconductor
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Rds On (Max) @ Id, Vgs: 34 mOhm @ 20A, 10V
Features: • Low ON-resistance.
• 4V drive.
• Ultrahigh-speed switching.
• Motor drive, DC / DC converter.
• Avalanche resistance guarantee.Pinout
Specifications
| Parameter |
Symbol |
Conditions |
Ratings |
Unit |
| Drain-to-Source Voltage |
VDSS |
|
100 |
V |
| Gate-to-Source Voltage |
VGSS |
|
±20 |
V |
| Drain Current (DC) |
ID |
|
40 |
A |
| Drain Current (Pulse) |
IDP |
PW10ms, duty cycle1% |
160 |
A |
| Allowable Power Dissipation |
PD |
|
1.75 |
W |
|
Tc=25 |
60 |
W |
| Channel Temperature |
Tch |
|
150 |
|
| Storage Temperature |
Tstg |
|
-55 to +150 |
|
| Avalanche Enargy (Single Pulse) *1 |
EAS |
|
190 |
mJ |
| Avalanche Current *2 |
IAV |
|
40 |
A |
Note : *1 VDD=20V, L=200mH, IAV=40A
*2 L200mH, Single pulse
| Absolute maximum ratings |
| VDSS [V] |
100 |
| VGSS [V] |
20 |
| ID [A] |
40 |
| PD [W] |
60
Tc=25°C |
| Electrical characteristics |
RDS(on) typ []
VGS=10V
ID [A]=20 |
0.026 |
RDS(on) typ []
VGS=4V
ID [A]=20 |
0.031 |
| VGS(off) min [V] |
1.2 |
| VGS(off) max [V] |
2.6 |
| |yfs| typ [S] |
31 |
| Ciss typ [pF] |
4200 |
| Qg typ [nC] |
79 |
2SK3827 Data Sheet
