2SK3868

Features: Application` Low drain-source ON resistance: RDS (ON) = 1.3 (typ.)` High forward transfer admittance: |Yfs| = 3S (typ.)` Low leakage current: IDSS = 100 A (VDS = 500 V)` Enhancement-mode: V th = 2.0~4.0 V (V DS = 10 V, ID = 1 mA)Specifications Characteristic Symbol Rating Unit Drainso...

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SeekIC No. : 004226922 Detail

2SK3868: Features: Application` Low drain-source ON resistance: RDS (ON) = 1.3 (typ.)` High forward transfer admittance: |Yfs| = 3S (typ.)` Low leakage current: IDSS = 100 A (VDS = 500 V)` Enhancement-mode: ...

floor Price/Ceiling Price

Part Number:
2SK3868
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/8

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Product Details

Description



Features:






Application

`  Low drain-source ON resistance: RDS (ON) = 1.3 (typ.)
`  High forward transfer admittance: |Yfs| = 3S (typ.)
`  Low leakage current: IDSS = 100 A (VDS = 500 V)
`  Enhancement-mode: V th = 2.0~4.0 V (V DS = 10 V, ID = 1 mA)



Specifications

Characteristic Symbol Rating Unit
Drainsource voltage VDSS 500 V
Draingate voltage (RGS = 20 k) VDGR 500 V
Gatesource voltage VGSS ±30 V
Drain current DC (Note 1) ID 5 A
Pulse (t = 1 ms)
(Note 1)
IDP 20 A
Drain power dissipation (Tc = 25) PD 35 W
Single-pulse avalanche energy
(Note 2)
EAS 180 mJ
Avalanche current IAR 5 A
Repetitive avalanche energy (Note 3) EAR 3.5 mJ
Channel temperature Tch 150
Storage temperature range Tstg −55~150





Description






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