Features: Application` Low drain-source ON resistance: RDS (ON) = 1.3 (typ.)` High forward transfer admittance: |Yfs| = 3S (typ.)` Low leakage current: IDSS = 100 A (VDS = 500 V)` Enhancement-mode: V th = 2.0~4.0 V (V DS = 10 V, ID = 1 mA)Specifications Characteristic Symbol Rating Unit Drainso...
2SK3868: Features: Application` Low drain-source ON resistance: RDS (ON) = 1.3 (typ.)` High forward transfer admittance: |Yfs| = 3S (typ.)` Low leakage current: IDSS = 100 A (VDS = 500 V)` Enhancement-mode: ...
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| Characteristic | Symbol | Rating | Unit | |
| Drainsource voltage | VDSS | 500 | V | |
| Draingate voltage (RGS = 20 k) | VDGR | 500 | V | |
| Gatesource voltage | VGSS | ±30 | V | |
| Drain current | DC (Note 1) | ID | 5 | A |
| Pulse (t = 1 ms) (Note 1) |
IDP | 20 | A | |
| Drain power dissipation (Tc = 25) | PD | 35 | W | |
| Single-pulse avalanche energy (Note 2) |
EAS | 180 | mJ | |
| Avalanche current | IAR | 5 | A | |
| Repetitive avalanche energy (Note 3) | EAR | 3.5 | mJ | |
| Channel temperature | Tch | 150 | ||
| Storage temperature range | Tstg | −55~150 | ||