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2SK3880

Features: Application• Low drain-source ON resistance: RDS (ON) = 1.35 (typ.)• High forward transfer admittance: |Yfs| = 5.2 S (typ.)• Low leakage current: IDSS = 100A (max) (VDS = 640 V)• Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)Specifications Characteri...

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SeekIC No. : 004226929 Detail

2SK3880: Features: Application• Low drain-source ON resistance: RDS (ON) = 1.35 (typ.)• High forward transfer admittance: |Yfs| = 5.2 S (typ.)• Low leakage current: IDSS = 100A (max) (VDS =...

2SK3880 Data Sheet

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Part Number:
2SK3880
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:






Application

• Low drain-source ON resistance: RDS (ON) = 1.35 (typ.)
• High forward transfer admittance: |Yfs| = 5.2 S (typ.)
• Low leakage current: IDSS = 100A (max) (VDS = 640 V)
• Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)


Specifications

Characteristic Symbol Rating Unit
Drainsource voltage VDSS 800 V
Draingate voltage (RGS = 20 k) VDGR 800 V
Gatesource voltage VGSS ±30 V
Drain current DC (Note 1) ID 6.5 A
Pulse (Note 1) IDP 19.5 A
Drain power dissipation (Tc = 25) PD 80 W
Single-pulse avalanche energy
(Note 2)		 EAS 375 mJ
Avalanche current IAR 6.5 A
Repetitive avalanche energy (Note 3) EAR 8 mJ
Channel temperature Tch 150
Storage temperature range Tstg −55~150





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