Features: • Super low on-state resistance RDS(on)1 = 3.5 m MAX. (VGS = 10 V, ID = 41 A)• Low Ciss: Ciss = 5800 pF TYP.Specifications Drain to Source Voltage (VGS = 0 V) VDSS 40 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) (TC = 25) ID(DC) ±80 A...
2SK3943: Features: • Super low on-state resistance RDS(on)1 = 3.5 m MAX. (VGS = 10 V, ID = 41 A)• Low Ciss: Ciss = 5800 pF TYP.Specifications Drain to Source Voltage (VGS = 0 V) VDSS 40 V...
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• Super low on-state resistance RDS(on)1 = 3.5 m MAX. (VGS = 10 V, ID = 41 A)
• Low Ciss: Ciss = 5800 pF TYP.
| Drain to Source Voltage (VGS = 0 V) | VDSS | 40 | V |
| Gate to Source Voltage (VDS = 0 V) | VGSS | ±20 | V |
| Drain Current (DC) (TC = 25) | ID(DC) |
±80 | A |
|
Drain Current (Pulse)Note1 |
ID(pulse) | ±328 | A |
|
Total Power Dissipation (Tc = 25) |
PT1 | 104 | W |
| Total Power Dissipation (TA= 25) | PT2 | 1.5 | W |
| Channel Temperature | Tch | 150 | |
| Storage Temperature | Tstg | -55 to +150 | |
| Single Avalanche Energy Note2 | EAS | 185 | mJ |
| Repetitive Avalanche Current Note3 | IAR | 43 | A |
| Repetitive Avalanche Energy Note3 | EAR | 185 | mJ |
The 2SK3943 is N-channel MOS Field Effect Transistor designed for high current switching applications.