2SK4003

Features:

` Low drain−source ON-resistance : R<sub>DS (ON)</sub> = 1.7 (typ.)
` Low leakage current : I_DSS = 100 A (max) (V_DS = 600 V)
` Enhancement mode : V_th = 2.0~4.0 V (V_DS = 10 V, I_D = 1 mA)



Specifications

Characteristic		Symbol	Rating	Unit
Drain - source voltage		VDSS	600	V
Drain−gate voltage (RGS = 20 kΩ)		VDGR	600	V
Gate - source voltage		VGSS	±30	V
Drain current	DC (Note 1)	ID	3	A
	Pulse (Note 1)	IDP	12
Drain power dissipation (Tc = 25)		PD	20	W
Single-pulse avalanche energy (Note 2)		EAS	168	mJ
Avalanche current		IAP	3	A
Repetitive avalanche energy (Note 3)		EAR	2	mJ
Channel temperature		Tch	150
Storage temperature		Tstg	55~150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and 
          the significant change in temperature, etc.) may cause this product to decrease in the reliability
          significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within
          the absolute maximum ratings. Please design the appropriate reliability upon reviewing the
          Toshiba  Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods)
          and individual reliability data (i.e. reliability test report and estimated failure rate, etc).