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2SK536-TB-E

MOSFET N-CH 50V 100MA 3CP

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SeekIC No. : 003431938 Detail

2SK536-TB-E: MOSFET N-CH 50V 100MA 3CP

2SK536-TB-E Data Sheet

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Part Number:
2SK536-TB-E
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Quick Details

Series: - Manufacturer: SANYO Semiconductor (U.S.A) Corporation
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 15.5 dB Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 50V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 100mA
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 20 Ohm @ 10mA, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: - Gate Charge (Qg) @ Vgs: -
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 15pF @ 10V
Power - Max: 200mW Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: 3-CP    

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)Alternate Packaging
Power - Max: 200mW
Gate Charge (Qg) @ Vgs: -
Drain to Source Voltage (Vdss): 50V
Vgs(th) (Max) @ Id: -
Current - Continuous Drain (Id) @ 25° C: 100mA
Input Capacitance (Ciss) @ Vds: 15pF @ 10V
Manufacturer: SANYO Semiconductor (U.S.A) Corporation
Supplier Device Package: 3-CP
Rds On (Max) @ Id, Vgs: 20 Ohm @ 10mA, 10V


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