2SK681

The 2SK681 is designed as one kind of N-channel vertical type MOS FET Array that can be driven by 5 V power supply. This device can be used as a high-speed switching device in digital circuits. Features of this device are:(1)directly driven by ICs having a 5 V power supply;(2)has low on-state resistance: RDS(on)= 1.0 max. @ VGS=4.0 V, ID=0.5 A;(3)possible to reduce the number of parts by omitting the bias resistor;(4)not necessary to consider driving current because of its high input impedance.

The absolute maximum ratings of the 2SK681 can be summarized as:(1)drain to source voltage: 30 V;(2)gate to source voltage: +/-20 V;(3)drain current (DC):±1.0 A;(4)drain current (pulse):±2.0 A;(5)total power dissipation (Tc=25 °C): 2000 mW;(6)channel tempera-ture:150 °C;(7)storage temperature:55 to +150 °C;(8)operating temperature: -55 to +80 °C.

And the electrical characteristics (TA=25 °C) of the 2SK681 can be summarized as:(1)drain to source on-resistance: 0.6 or 0.4 ;(2)gate to source cutoff voltage: 1.0 V to 2.5 V(3)forward transfer admittance: 0.4 S;(4)drain cut-off current: 10 A;(5)gate to source leakage current: +/-10 A;(6)input capacitance: 230 pF;(7)output capacitance: 130 pF;(8)feedback capacitance: 70 pF;(9)turn-on delay time: 12 ns;(10)rise time: 44 ns. If you want to know more information such as the electrical characteristics about the 2SK681, please download the datasheet in www.seekic.com or www.chinaicmart.com.