2SK880-Y

The 2SK880-Y is designed as one kind of TOSHIBA field effect transistor that can be used in audio frequency low noise amplifier applications. This device has some points of features:(1)High |Yfs|: |Yfs| = 15 mS (typ.) at VDS = 10 V, VGS = 0; (2)High breakdown voltage: VGDS = -50 V; (3)Low noise: NF = 1.0dB (typ.) at VDS = 10 V, ID = 0.5 mA, f = 1 kHz, RG = 1 k; (4)High input impedance: IGSS = -1 nA (max) at VGS = -30 V; (5)Small package.

The electrical characteristics of the 2SK880-Y can be summarized as:(1)Gate cut-off current: -1.0 nA;(2)Gate-drain breakdown voltage: -50 V;(3)Drain current: 1.2 to 14.0 mA;(4)Gate-source cut-off voltage: -0.2 to -1.5 V;(5)Forward transfer admittance: 4.0 to 15 mS;(6)Input capacitance: 13 pF;(7)Reverse transfer capacitance: 3 pF.

The absolute maximum ratings (Ta = 25°C) of 2SK880-Y can be summarized as:(1)Gate-drain voltage: -50 V;(2)Gate current: 10 mA;(3)Drain power dissipation: 100 mW;(4)Junction temperature: 125 °C;(5)Storage temperature range: -55 to 125 °C. If you want to know more information about the 2SK880-Y, please download the datasheet in www.seekic.com or www.chinaicmart.com .