2SK982

Features:

• Excellent switching times: t_on = 14 ns (typ.)
• High forward transfer admittance: |Yfs| = 100 mS (min)
                                                         @I_D = 50 mA
• Low on resistance: R_{DS (ON)} = 0.6 Ω (typ.) @ I_D = 50 mA
• Enhancement-mode
• Complementary to 2SJ148




Specifications

Characteristics		Symbol	Rating	Unit
Drain-Source Voltage		VDS	60	V
Gate-Source Voltage		VGSS	±20	V
Drain Current	DC	ID	200	mA
	Pulse	IDP	800
Drain Power Dissipation TC=25		PD	400	mW
Channel temperature		Tch	150
Storage temperature range		TSTG	−55~150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
          significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
          if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
          maximum ratings.

         Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
         ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e.
         reliability  testreport and estimated failure rate, etc).

Description