2STA2120

Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Emitter- Base Voltage VEBO : - 6 V
Mounting Style : Through Hole
Packaging : Tube
DC Collector/Base Gain hfe Min : 80
Maximum Operating Frequency : 25 MHz
Package / Case : TO-3P
Collector- Emitter Voltage VCEO Max : - 250 V
Maximum DC Collector Current : - 34 A


Features:

High breakdown voltage V_CEO = 250 V
Complementary to 2STC5948
Fast-switching speed
Typical ft = 25 MHz
Fully characterized at 125


Application

Audio power amplifier


Specifications

SYMBOL	PARAMETER	CONDITIONS	VALUE	UNIT
VCBO	Collector-base voltage	Open emitter	-250	V
VCEO	Collector-emitter voltage	Open base	-250	V
VEBO	Emitter-base voltage	Open collector	-6	V
IC	Collector current (DC)		-17	A
ICM	Collector current-peak		-34	A
PC	Collector power dissipation	TC=25	200	W
Tj	Junction temperature		150
Tstg	Storage temperature		-65~150

Description

The 2STA2120 is a PNP transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour.

Parameters:

Technical/Catalog Information	2STA2120
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	250V
Current - Collector (Ic) (Max)	34A
Power - Max	200W
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 1A, 5V
Vce Saturation (Max) @ Ib, Ic	3V @ 800mA, 8A
Frequency - Transition	25MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-3P
Packaging	Tube
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	2STA2120 2STA2120 497 8740 5 ND 49787405ND 497-8740-5