2STA2510

Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Emitter- Base Voltage VEBO : 6 V
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 100 V
Packaging : Tube
DC Collector/Base Gain hfe Min : 40
Maximum DC Collector Current : 25 A
Package / Case : TO-3P
Maximum Operating Frequency : 20 MHz


Features:

`High breakdown voltage VC<sub>EO</sub> = -100 V
`Complementary to 2STC2510
`Fast-switching speed
`Typical ft = 20 MHz
`Fully characterized at 125


Application

Audio power amplifier


Specifications

SYMBOL	PARAMETER	Value	UNIT
VCBO	Collector-base voltage(IE = 0)	-100	V
VCEO	Collector-emitter voltage(IB = 0)	-100	V
VEBO	Emitter-base voltage(IC = 0)	-6	V
IC	Collector Current	-25	A
ICM	Collector current-Pulse	-50	A
PTOT	Collector Power Dissipation @Tc=25	125	W
Tj	Junction temperature	150
TSTG	Storage temperature	-65 to +150

Description

The 2STA2510 is a PNP transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour.

Parameters:

Technical/Catalog Information	2STA2510
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	100V
Current - Collector (Ic) (Max)	25A
Power - Max	125W
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 12A, 4V
Vce Saturation (Max) @ Ib, Ic	1.5V @ 1.2A, 12A
Frequency - Transition	20MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-3P
Packaging	Tube
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	2STA2510 2STA2510 497 6955 5 ND 49769555ND 497-6955-5