2STW1695

Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Emitter- Base Voltage VEBO : 6 V
DC Collector/Base Gain hfe Min : 70
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-247
Maximum DC Collector Current : 10 A
Collector- Emitter Voltage VCEO Max : 140 V
Maximum Operating Frequency : 20 MHz


Features:

` High breakdown voltage V<sub>CEO</sub> = -140 V
` Complementary to 2STW4468
` Typical ft = 20 MHz
` Fully characterized at 125


Application

· Audio power amplifier



Specifications

Symbol	Parameter	Value	Unit
VCBO	Collector-base voltage (IE = 0)	-140	V
VCEO	Collector-emitter voltage (IB = 0)	-140	V
VEBO	Emitter-base voltage (IC = 0)	-6	V
IC	Collector current	-10	A
ICM	Collector peak current (tP < 5 ms)	-20	A
Ptot	Total dissipation at Tc = 25	100	W
Tstg	Storage temperature	-65 to 150
Tj	Max. operating junction temperature	150

Description

The 2STW1695 is a PNP transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour.

Recommended for 70 W to 100 W high fidelity audio frequency amplifier output stage. Figure 1. Internal schematic diagram

Parameters:

Technical/Catalog Information	2STW1695
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	140V
Current - Collector (Ic) (Max)	10A
Power - Max	100W
DC Current Gain (hFE) (Min) @ Ic, Vce	70 @ 3A, 4V
Vce Saturation (Max) @ Ib, Ic	500mV @ 500mA, 5A
Frequency - Transition	20MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-247-3
Packaging	Tube
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	2STW1695 2STW1695 497 7064 5 ND 49770645ND 497-7064-5