Features: P1dB Output Power: +15.5 dBmOutput IP3: +31.5 dBmGain: 16 dB50 Ohm I/O'sIndustry Standard SOT89 PackageIncluded in the HMC-DK001 Designer's Kitgain block or LO buffer amplifi er for:ApplicationThe HMC311ST89 / HMC311ST89E is an ideal RF/IF gain block or LO buffer amplifi er for:• C...
311ST89E: Features: P1dB Output Power: +15.5 dBmOutput IP3: +31.5 dBmGain: 16 dB50 Ohm I/O'sIndustry Standard SOT89 PackageIncluded in the HMC-DK001 Designer's Kitgain block or LO buffer amplifi er for:Applic...
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| Collector Bias Voltage (Vcc) | +7 Volts |
| RF Input Power (RFin)(Vcc = +3.9 Vdc) | +10 dBm |
| Junction Temperature | 150 |
| Continuous Pdiss (T = 85) (derate 5.21 mW/ above 85) |
0.34W |
| Thermal Resistance (junction to lead) |
191/W |
| Storage Temperature | -65 to +150 |
| Operating Temperature | -40 to +85 |
The HMC311ST89 & HMC311ST89E are GaAs InGaP Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT DC to 6 GHz amplifi ers. Packaged in an industry standard SOT89, the amplifi er can be used as either a cascadable 50 Ohm gain stage or to drive the LO of HMC mixers with up to +16.5 dBm output power. The HMC311ST89 & HMC311ST89E offer 16 dB of gain and an output IP3 of +31.5 dBm while requiring only 54 mA from a +5V supply. The Darlington feedback pair used results in reduced sensitivity to normal process variations and yields excellent gain stability over temperature while requiring a minimal number of external bias components.