311ST89E

Features: P1dB Output Power: +15.5 dBmOutput IP3: +31.5 dBmGain: 16 dB50 Ohm I/O'sIndustry Standard SOT89 PackageIncluded in the HMC-DK001 Designer's Kitgain block or LO buffer amplifi er for:ApplicationThe HMC311ST89 / HMC311ST89E is an ideal RF/IF gain block or LO buffer amplifi er for:• C...

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311ST89E Picture
SeekIC No. : 004227882 Detail

311ST89E: Features: P1dB Output Power: +15.5 dBmOutput IP3: +31.5 dBmGain: 16 dB50 Ohm I/O'sIndustry Standard SOT89 PackageIncluded in the HMC-DK001 Designer's Kitgain block or LO buffer amplifi er for:Applic...

floor Price/Ceiling Price

Part Number:
311ST89E
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/7

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Product Details

Description



Features:

P1dB Output Power: +15.5 dBm
Output IP3: +31.5 dBm
Gain: 16 dB
50 Ohm I/O's
Industry Standard SOT89 Package
Included in the HMC-DK001 Designer's Kit
gain block or LO buffer amplifi er for:



Application

The HMC311ST89 / HMC311ST89E is an ideal RF/IF gain block or LO buffer amplifi er for:
• Cellular / PCS / 3G
• Fixed Wireless & WLAN
• CATV & Cable Modem
• Microwave Radio



Pinout

  Connection Diagram


Specifications

Collector Bias Voltage (Vcc) +7 Volts
RF Input Power (RFin)(Vcc = +3.9 Vdc) +10 dBm
Junction Temperature 150
Continuous Pdiss (T = 85)
(derate 5.21 mW/ above 85)
0.34W
Thermal Resistance
(junction to lead)
191/W
Storage Temperature -65 to +150
Operating Temperature -40 to +85



Description

The HMC311ST89 & HMC311ST89E are GaAs InGaP Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT DC to 6 GHz amplifi ers. Packaged in an industry standard SOT89, the amplifi er can be used as either a cascadable 50 Ohm gain stage or to drive the LO of HMC mixers with up to +16.5 dBm output power. The HMC311ST89 & HMC311ST89E offer 16 dB of gain and an output IP3 of +31.5 dBm while requiring only 54 mA from a +5V supply. The Darlington feedback pair used results in reduced sensitivity to normal process variations and yields excellent gain stability over temperature while requiring a minimal number of external bias components.




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