3165400AT

Operating temperature range......................0 to 70
Storage temperature range................. 55 to 150
Input/output voltage.........-0.5 to min (Vcc+0.5,4.6) V
Power supply voltage............................-0.5V to 4.6 V
Power dissipation..............................................1.0 W
Data out current (short circuit)..........................50 mA
Stresses above those listed under „Absolute Maximum Ratings" may cause permanent damage of the device. Exposure to absolute maximum rating conditions for extended periods may effect device reliability.

This 3165400AT is a 64 MBit dynamic RAM organized 16 777 216 by 4 bits. The 3165400AT is fabricated on an advanced second generation 64Mbit 0,35 mm-CMOS silicon gate process technology. The circuit and process design allow this device to achieve high performance and low power dissipation. This DRAM operates with a single 3.3 +/-0.3V power supply and interfaces with either LVTTL or LVCMOS levels. Multiplexed address inputs permit the HYB 3164(5)400AJ/AT to be packaged in a 400mil wide SOJ-32 or TSOP-32 plastic package. These packages provide high system bitensities and are compatible with commonly used automatic testing and insertion equipment. The  3165400AT parts (L-versions) have a very low power „sleep mode" supported by Self Refresh