Features: * Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation * Low drain to tab capacitance(<50pF)* Low RDS (on) HDMOSTM process* Rugged polysilicon gate cell structure* Unclamped Inductive Switching (UIS) rated* Fas...
32N50Q: Features: * Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation * Low drain to tab capacitance(<50pF)* Low RDS (on) HDM...
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* Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation
* Low drain to tab capacitance(<50pF)
* Low RDS (on) HDMOSTM process
* Rugged polysilicon gate cell structure
* Unclamped Inductive Switching (UIS) rated
* Fast intrinsic Rectifier
Symbol | Test Conditions | Maximum Ratings | |
VDSS VDGR |
TJ = 25 to 150 TJ = 25 to 150 ; RGS = 1 M |
500 500 |
V V |
VGS VGSM |
Continuous Transient |
±20 ±30 |
V V |
ID25 IDM IAR |
TC = 25 30N50 32N50 TC = 25 , Pulse width limited by TJM 30N50 32N50 TC = 25 30N50 32N50 |
30 120 30 |
A A A |
EAS EAR |
TC = 25 TC = 25 |
1.5 45 |
J mJ |
dv/dt | IS IDM, di/dt 100 A/s, VDD VDSS TJ 150, RG = 2 |
5 | V/n |
PD | TC = 25 | 310 | W |
TJ TJM Tstg |
-55 ... +150 150 -55 ... +150 |
| |
TL | 1.6 mm (0.062 in.) from case for 10 s | 300 | |
VISOL | 50/60 Hz, RMS t = 1 minute leads-to-tab | 2500 | V~ |
Weight | 6 | g |