32WQ Selling Leads, Price trend, 32WQ DataSheet download, circuit diagram from SeekIC.com

Features: ` Device Architecture- Flash Density: 32-Mbit, 64-Mbit- Async PSRAM Density: 16-Mbit, 32-Mbit- Top, Bottom or Dual flash parameter configuration` Device Voltage- Flash VCC = 1.8 V; Flash VCCQ = 1.8 V or 3.0 V- RAM VCC = 1.8 V or 3.0 V` Device Packaging- 88 balls (8 x 10 active ball ma...

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SeekIC No. : 004228341 Detail

32WQ: Features: ` Device Architecture- Flash Density: 32-Mbit, 64-Mbit- Async PSRAM Density: 16-Mbit, 32-Mbit- Top, Bottom or Dual flash parameter configuration` Device Voltage- Flash VCC = 1.8 V; Flash...

32WQ Data Sheet

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Part Number:: 32WQ
Supply Ability:: 5000

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Product Details

Description

Features:

` Device Architecture
- Flash Density: 32-Mbit, 64-Mbit
- Async PSRAM Density: 16-Mbit, 32-Mbit
- Top, Bottom or Dual flash parameter
configuration
` Device Voltage
- Flash VCC = 1.8 V; Flash VCCQ = 1.8 V or 3.0 V
- RAM VCC = 1.8 V or 3.0 V
` Device Packaging
- 88 balls (8 x 10 active ball matrix)
- Area: 8x10 mm
- Height: 1.2 mm to 1.4 mm
` PSRAM Performance
- 70 ns initial access, 25 ns async page reads at 1.8 V I/O
- 70 ns initial access async PSRAM at 1.8 V I/O
- 70 ns initial access, 25 ns async page
reads at 3.0 V I/O
` SRAM Performance
- 70 ns initial access at 1.8 V or 3.0 V I/O
` Quality and Reliability
- Extended Temperature: 25 °C to +85 °C
- Minimum 100K flash block erase cycle
- 90 nm ETOX™ IX flash technology
- 130 nm ETOX™ VIII flash technology
` Flash Performance
- 65 ns initial access at 1.8 V I/O
- 70 ns initial access at 3.0 V I/O
- 25 ns async page at 1.8 V or 3.0 V I/O
- 14 ns sync reads (tCHQV) at 1.8 V I/O
- 20 ns sync reads (tCHQV) at 3.0 V I/O
- Enhanced Factory Programming:
3.10 s/Word (Typ)
` Flash Architecture
- Read-While-Write/Erase
- Asymmetrical blocking structure
- 4-KWord parameter blocks (Top or Bottom)
- 32-KWord main blocks
- 4-Mbit partition size
- 128-bit One-Time Programmable
(OTP) Protection Register
- Zero-latency block locking
- Absolute write protection with block
lock using F-VPP and F-WP#
` Flash Software
- Numonyx™ Flash Data Integrator
(FDI) and Common Flash Interface (CFI)

Specifications

Parameter		Min	Max	Unit	Notes
Temperature under Bias Extended		-25	+85	°C	7
Storage Temperature		-55	+125	°C
Voltage On Any Signal (except F[2:1]-V_CC, V_CCQ, F-VPP, S-V_CC and P-V_CC)	1.8 V I/O	-0.2	+2.45	V	1,2,3
	3.0 V I/O	-0.2	+3.6	V	2,3
F[2:1]-V_CC Voltage		-0.5	+2.45	V	2,3
V_CCQ, S-V_CC and P-V_CCVoltage	1.8 V I/O	-0.2	+2.45	V	1,2,3
V_CCQ, S-V_CC and P-V_CCVoltage	3.0 V I/O	-0.2	+3.6	V	2,3
F-V_PP Voltage		-0.2	+14.0	V	2,3,4,5
ISH Output Short Circuit Current		-	100	mA	6

Notes:
1. 90 nm is only avail with the 1.8 V I/O.
2. All Specified voltages are relative to VSS. Minimum DC voltage is 0.2 V on input/output signals, 0.2 V on F[2:1]-VCC
and F-VPP signals. For 90 nm devices, during transitions, this level may overshoot to 1.5 V for periods < 20 ns, during
transitions, may overshoot to F-VCC + 1.5 V for periods < 20 ns.
3. All Specified voltages are relative to VSS. Minimum DC voltage is 0.2 V on input/output signals, 0.2 V on F[2:1]-VCC
and F-VPP signals. For 130 nm devices, during transitions, this level may overshoot to 2 V for periods < 20 ns, during
transitions, may overshoot to F-VCC + 2 V for periods < 20 ns.
4. Maximum DC voltage on F-VPP may overshoot to +14.0 V for periods < 20 ns.
5. F-VPP program voltage is normally VPPL. The maximum DC voltage on F-VPP may overshoot to +14 V for periods < 20
ns. F-VPP can be VPPH for 1000 erase cycles on main blocks, 2500 cycles on parameter blocks.
6. Output shorted for no more than one second. No more than one output shorted at a time.
7. Devices available with -30o C temperature specifications are: 38F2020W0ZTQ1, 38F2020W0ZBQ1, 38F2030W0YTQ1,
38F2030W0YBQ1, 38F2030W0ZTQ2, 38F2030W0ZBQ2, 38F1030W0ZTQ0, 38F1030W0ZBQ0, 38F2030W0YTQF,
38F2030W0YBQF, 38F2040W0YTQF, 38F2040W0YBQF

Description

This document contains information pertaining to the 32WQin the Numonyx™ Wireless Flash Memory (W18/W30 SCSP) family with asynchronous RAM. The W18/ W30 SCSP 32WQ and 64WQ families offer a wide variety of stacked combinations that include single flash die, two flash die, flash + PSRAM, and flash + SRAM options. This document provides information where this SCSP family differs from the Numonyx Wireless Flash Memory (W18/W30) discrete device.

Refer to the discrete datasheets Numonyx™ Wireless Flash Memory (W18) Datasheet (order number 290701) and Numonyx™ Wireless Flash Memory (W30) Datasheet (order number 290702) for flash product details not included in this SCSP datasheet. The Numonyx Wireless Flash Memory (W18/W30 SCSP) family offers various flash plus static RAM combinations in a common package footprint. The flash memory features 1.8 V low-power operations with flexible, multi-partition, dual-operation Read-While- Write / Read-While-Erase, asynchronous, and synchronous reads. This SCSP device integrates 32WQ up to two flash die, and one PSRAM or SRAM die in a low-profile package compatible with other SCSP families with QUAD+ ballout.

32WQ

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