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Part Number: 385LP4E

 

 

 

 

Description: The HMC385LP4 & HMC385LP4E are GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCOs with i...


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385LP4E General Description


The HMC385LP4 & HMC385LP4E are GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCOs with integrated resonators, negative resistance devices, varactor diodes, and buffer amplifi ers. Covering 2.25 to 2.5 GHz, the VCO's phase noise performance is excellent over temperature, shock, vibration and process due to the oscillator's monolithic structure. Power output is 4.5 dBm typical from a single supply of 3V @ 35mA. The voltage controlled oscillator is packaged in a low cost leadless QFN 4x4 mm surface mount package.

385LP4E Maximum Ratings

Vcc +3.5 Vdc
Vtune 0 to +11V
Channel Temperature 150
Continuous Pdiss (T = 85)
(derate 6.28 mW/ above 85)
565W
Storage Temperature -65 to +150
Operating Temperature -40 to +85

385LP4E Features

Pout: +4.5 dBm
Phase Noise: -115 dBc/Hz @100 KHz
No External Resonator Needed
Single Supply: 3V @ 35 mA
QFN Leadless SMT Package, 16 mm2

385LP4E Typical Application

Low noise MMIC VCO w/Buffer Amplifi er for:
• Wireless Infrastructure
• Industrial Controls
• Test Equipment
• Military

385LP4E Connection Diagram

385LP4E  Connection Diagram

385LP4E datasheet

3850
PDF/DataSheet Download

  • Datasheet: 3850
  • File Size: 1418085 KB
  • Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]
  • Click here to Download

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