3DD13007

The 3DD13007 TRANSISTOR (NPN) is a kind of TO-220 plastic-encapsulate transistor (NPN).Here you can get some information about the features.Power dissipation (P_CM) is 2 W (Tamb=25).Collector current(I_CM) is 8 A.Collector-base voltage (V_(BR)CBO) is 700 V.Operating and storage junction temperature range (T_J,T_stg) is from -55 to +150.
The following is some electrical characteristics of 3DD13007 (Tamb=25).The minimum collector-base breakdown voltage (V_(BR)CBO) is 700 V under the condition of I_c= 1mA,I_E=0.The minimum collector-emitter breakdown voltage (V_(BR)CEO) is 400 V under the condition of I_c= 10mA,I_B=0.The minimum emitter-base breakdown voltage (V_(BR)EBO) is 9 V under the condition of I_E= 1mA,I_C=0. The maximum collector cut-off current (I_CBO) is 1 mA under the condition of V_CB= 700V,I_E=0. The maximum emitter cut-off current (I_EBO) is 100 A under the condition of V_EB= 9 V,I_C=0.The maximum collector-emitter saturation voltage (V_CE(sat)) is 1 V under the condition of I_C=2A,I_B=0.4A.The maximum base-emitter saturation voltage (V_BE(sat)) is 1.2 V under the condition of I_C=2A, I_B= 0.4A.The minmum transition frequency (f_T) is 4 MHZ under the condition of I_c=500mA,V_CE=10V and f=1MHZ.The typical collector output capacitance (C_ob) is 80 pF under the condition of V_CE=10,I_E=0,f=0.1MHz.The maximum fall time (t_f) is 0.7 s and the storage time (t_s) is 3 s under the condition of V_cc=125V, I_c=5A and I_B1=-I_B2=1A.