3DSD1280-323H

Features:

Organized as 40M x 32-bit.
Single +3.3V ±0.3V power supply
Two stacks of ten 64 MBit SDRAM mountedon ceramic hermetic package
Fully synchronous; all signals registered on positive edge of system clock.
Internal pipelined operation; column address can be changed every clock cycle.
Programmable burst lengths: 1, 2, 4, 8 or full page.
Auto Precharge, includes Concurrent Auto Precharge, and Auto Refresh Modes.
Self Refresh Mode
LVTTL - compatible inputs and outputs
Vcc and Vss are decoupled with four 10nF and four 100nF capacitors inside the module
MIL-STD-883D Class S screening -
temperature range : -15°C to +80°


Pinout




Specifications

Parameter	Symbol	Rating	Units
Power Supply Voltage	Vcc	- 0.3 to +4.6	V
Power Supply Voltage for Output	Vcc	- 0.3 to +4.6	V
Input Voltage	Vin	- 0.3 to Vcc+0.3	V
Output Voltage	Vout	- 0.3 to Vcc+0.3	V
Storage temperature	Tstg	- 55 to +150	°C
Short Circuit Output Current	Iout	TBD	mA

Description

The 3DSD1280-323H is a highly integrated Synchronous Dynamic Random Access Memory ceramic module,containing 1,342,177,280 bits. It is organized with ten banks of 128 Mbit. Each Bank has a 32-bit interface,and is selected with specific CS#. All other signals are common to the twenty 64 MBit SDRAM memories.

It is particularly well suited for use in high performance and high density aerospace applications, such as solid state recorder for airbornes and satellites.