Features: `RDS(ON)=3.8 @VGS=10 V`Ultra low gate charge ( typical 19 nC )`Low reverse transfer capacitance ( CRSS = typical 11 pF )`Fast switching capability`Avalanche energy specified`Improved dv/dt capability, high ruggednessSpecifications PARAMETER SYMBOL RATINGS UNIT Drain-Source Vol...
3N80: Features: `RDS(ON)=3.8 @VGS=10 V`Ultra low gate charge ( typical 19 nC )`Low reverse transfer capacitance ( CRSS = typical 11 pF )`Fast switching capability`Avalanche energy specified`Improved dv/dt...
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| PARAMETER | SYMBOL | RATINGS | UNIT | |
| Drain-Source Voltage (VGS=0V) | VDSS | 800 | V | |
| Drain-Gate Voltage (RG=20k) | VDGR | 800 | V | |
| Gate-Source Voltage | VGSS | ±30 | V | |
| Gate-Source Breakdown Voltage (IGS=±1mA) | BVGSO | 30(MIN) | V | |
| Gate Source ESD(HBM-C=100pF, R=1.5K) | VESD(G-S) | 2 | V | |
| Insulation Withstand Voltage (DC) | TO-220F | VISO | 2500 | V |
| Avalanche Current (Note 2) | IAR | 2.5 | A | |
| Continuous Drain Current | ID | 2.5 | A | |
| Pulsed Drain Current | IDM | 10 | A | |
| Single Pulse Avalanche Energy (Note 3) | EAS | 170 | mJ | |
| Peak Diode Recovery dv/dt (Note 4) | dv/dt | 4.5 | V/ns | |
| Power Dissipation | TO-220 | PD | 70 | W |
| TO-220F | 25 | |||
| Junction Temperature | TJ | +150 | ||
| Storage Temperature | TSTG | -55 ~ +150 | ||
The UTC 3N80 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This 3N80 is suitable for use as a load switch or in PWM applications.