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3P4MH

Features: • This transistor features a small and lightweight package and is easy to handle even on the mounting surface due to its TO-202AA dimensions. Processing of lead wires and heatsink (tablet) using jigs is also possible.• Employs flame-retardant epoxy resin (UL94V-0).Application...

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SeekIC No. : 004230053 Detail

3P4MH: Features: • This transistor features a small and lightweight package and is easy to handle even on the mounting surface due to its TO-202AA dimensions. Processing of lead wires and heatsink (t...

3P4MH Data Sheet

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Part Number:
3P4MH
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/23

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Product Details

Description



Features:

• This transistor features a small and lightweight package and is easy to handle even on the mounting surface due to its TO-202AA dimensions. Processing of lead wires and heatsink (tablet) using jigs is also possible.
• Employs flame-retardant epoxy resin (UL94V-0).


Application

Noncontact switches of consumer electronic euipments,electric equipments, audio quipments, and light indutry equipements


Specifications

 
Parameter Symbol 3P4MH 3P6MH Ratings Unit
Non-repetitive peak reverse voltage VRSM 500 700 v RGK = 1 k
Non-repetitive peak off-state voltage VDSM 500 700 v RGK = 1 k
Repetitive peak reverse voltage VRRM 400 600 v RGK = 1 k
Repetitive peak off-voltage VDRM 400 600 v RGK = 1 k
Average on-state current I T(AV) 3 (Tc = 87°C, Single half-wave, = 180°) A Refer to Figure 11.
Effective on-state current I T(RMS) 4.7 A -
Surge on-state current ITSM 65 (f = 50 Hz, Sine half-wave, 1 cycle)
70 (f = 60 Hz, Sine half-wave, 1 cycle)		 A Refer to Figure 2.
Fusing current it2dt 20 (1 mst10 ms) A2s -
Critical rate of rise of on-state current dIT/dt 50 A/s -
Peak gate power dissipation PGM 2 (f50 Hz, Duty10%) W Refer to Figure 3.
Average gate power dissipation P G(AV) 0.2 W
Peak gate forward current IFGM 1 (f50 Hz, Duty10%) A -
Peak gate reverse voltage VRGM 6 V -
Junction temperature Tj −40 to +125 °C -
Storage temperature Tstg −55 tp +150 °C -



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