3SK165A

Features: • Low voltage operation• Low noise: NF = 1.2dB (typ.) at 800MHz• High gain: Ga = 20dB (typ) at 800MHz• High stabilityApplicationUHF band amplifier, mixer and oscillatorSpecificationsDrain to Source Voltage VDSX 18 VGate1 to Source Voltage VG1S 6 VGate2 to Source V...

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SeekIC No. : 004230099 Detail

3SK165A: Features: • Low voltage operation• Low noise: NF = 1.2dB (typ.) at 800MHz• High gain: Ga = 20dB (typ) at 800MHz• High stabilityApplicationUHF band amplifier, mixer and oscill...

floor Price/Ceiling Price

Part Number:
3SK165A
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/3/28

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Product Details

Description



Features:

• Low voltage operation
• Low noise: NF = 1.2dB (typ.) at 800MHz
• High gain: Ga = 20dB (typ) at 800MHz
• High stability



Application

UHF band amplifier, mixer and oscillator


Specifications

Drain to Source Voltage                  VDSX               18              V
Gate1 to Source Voltage                 VG1S              6              V
Gate2 to Source Voltage                 VG2S              6              V
Drain Current                                    ID                 80
             mA
Total Power Dissipation                     PD               150            mW
Channel Temperature                        Tch              150            °C
Storage Temperature                         Tstg     55 to +150     °C



Description

The 3SK165A is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This 3SK165A FET is suitable for a wide range of applications including cellular, cordless phone.


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