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3SK225

Application• Superior cross modulation performance.• Low noise figure: NF = 2.0dB (typ.)Specifications Characteristics Symbol Rating Rating Drain-source voltage VDS 13.5 V Gate 1-source voltage VG1S ±8 V Gate 2-source voltage VG2S ±8 V Drain current ID 30...

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3SK225: Application• Superior cross modulation performance.• Low noise figure: NF = 2.0dB (typ.)Specifications Characteristics Symbol Rating Rating Drain-source voltage VDS 13.5 V ...

3SK225 Data Sheet

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Part Number:
3SK225
Supply Ability:
5000

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  • 1~5000
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  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Application

• Superior cross modulation performance.
• Low noise figure: NF = 2.0dB (typ.)


Specifications

Characteristics Symbol Rating Rating
Drain-source voltage VDS 13.5 V
Gate 1-source voltage VG1S ±8 V
Gate 2-source voltage VG2S ±8 V
Drain current ID 30 V
Drain power dissipation PD 150 mA
Channel temperature Tch 125 mW
Storage temperature range Tstg −55~125

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).


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