Application• Superior cross modulation performance.• Low reverse transfer capacitance.: Crss = 20 fF (typ.)• Low noise figure.: NF = 1.5dB (typ.)Specifications Characteristics Symbol Ratings Unit Drain-source voltage VDS 12.5 V Gate 1-source voltage ...
3SK232: Application• Superior cross modulation performance.• Low reverse transfer capacitance.: Crss = 20 fF (typ.)• Low noise figure.: NF = 1.5dB (typ.)Specifications Characteristics...
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Characteristics |
Symbol |
Ratings |
Unit |
Drain-source voltage |
VDS |
12.5 |
V |
Gate 1-source voltage |
VG1S |
±8 |
V |
Gate 2-source voltage |
VG2S |
±8 |
V |
Drain current |
ID |
30 |
mA |
Channel power dissipation |
PD |
150 |
mW |
Channel temperature |
Tch |
125 |
|
Storage temperature |
Tstg |
55 to +150 |
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).