3SK292

Application• Superior cross modulation performance.• Low reverse transfer capacitance: Crss = 20 fF (typ.)• Low noise figure: NF = 1.4dB (typ.)Specifications Characteristics Symbol Rating Unit Drain-source voltageGate 1-source voltageGate 2-source voltageDC drain curre...

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SeekIC No. : 004230125 Detail

3SK292: Application• Superior cross modulation performance.• Low reverse transfer capacitance: Crss = 20 fF (typ.)• Low noise figure: NF = 1.4dB (typ.)Specifications Characteristics ...

floor Price/Ceiling Price

Part Number:
3SK292
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/25

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Product Details

Description



Application

• Superior cross modulation performance.
• Low reverse transfer capacitance: Crss = 20 fF (typ.)
• Low noise figure: NF = 1.4dB (typ.)



Specifications

Characteristics Symbol Rating Unit
Drain-source voltage

Gate 1-source voltage

Gate 2-source voltage

DC drain current
VDS

VG1S

VG2S

ID
12.5

±8

±8

30
V

V

V

mA
Drain power dissipation

Channel temperature

Storage temperature range
PD

Tch

Tstg
150

125

−55~150
mW




Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).




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