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455LP3E

Features: Output IP3: +42 dBmGain: 13 dB56% PAE @ +28 dBm Pout+19 dBm W-CDMA Channel Power @ -45 dBc ACP3x3 mm QFN SMT PackageApplicationThis amplifi er is ideal for high linearity applications:• Multi-Carrier Systems• GSM, GPRS & EDGE• CDMA & WCDMA• PHSPinoutSpecif...

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SeekIC No. : 004231270 Detail

455LP3E: Features: Output IP3: +42 dBmGain: 13 dB56% PAE @ +28 dBm Pout+19 dBm W-CDMA Channel Power @ -45 dBc ACP3x3 mm QFN SMT PackageApplicationThis amplifi er is ideal for high linearity applications:R...

455LP3E Data Sheet

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Part Number:
455LP3E
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

Output IP3: +42 dBm
Gain: 13 dB
56% PAE @ +28 dBm Pout
+19 dBm W-CDMA Channel Power @ -45 dBc ACP
3x3 mm QFN SMT Package


Application

This amplifi er is ideal for high linearity applications:
• Multi-Carrier Systems
• GSM, GPRS & EDGE
• CDMA & WCDMA
• PHS


Pinout

Connection Diagram


Specifications

Collector Bias Voltage (Vcc) +6.0 Vdc
RF Input Power (RFin)(Vs = +5.0 Vdc) +25 dBm
Junction Temperature 150
Continuous Pdiss (T = 85 )
(derate 16 mW/ above 85 )		 1.04 W
Thermal Resistance
(junction to ground paddle)		 63 /W
Storage Temperature -65 to +150
Operating Temperature -40 to +85



Description

The HMC455LP3 & HMC455LP3E are high output IP3 GaAs InGaP Heterojunction Bipolar Transistor (HBT) ½ watt MMIC amplifi ers operating between 1.7 and 2.5 GHz. Utilizing a minimum number of external components the amplifi er provides 13 dB of gain and +28 dBm of saturated power at 56% PAE from a single +5 Vdc supply voltage. The high output IP3 of +42 dBm coupled with the low VSWR of 1.4:1 make the HMC455LP3 & HMC455LP3E ideal driver amplifi ers for PCS/3G wireless infrastructures. A low cost, leadless 3x3 mm QFN surface mount package (LP3) houses the linear amplifi er. The LP3 of HMC455LP3 & HMC455LP3E provides an exposed base for excellent RF and thermal performance.




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