Features: * Low on-resistance N-channel: RDS(on) 0.17, VGS = 10 V, ID = 2.5 A P-channel: RDS(on) 0.2, VGS = 10 V, ID = 2.5 A * Capable of 4 V gate drive* Low drive current* High speed switching* High density mounting* Suitable for H-bridged motor driverApplicationHigh speed power switchingSpecific...
4AM11: Features: * Low on-resistance N-channel: RDS(on) 0.17, VGS = 10 V, ID = 2.5 A P-channel: RDS(on) 0.2, VGS = 10 V, ID = 2.5 A * Capable of 4 V gate drive* Low drive current* High speed switching* Hig...
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| Item |
Symbol |
Ratings |
Unit | |
| Nch | Pch | |||
| Drain to source voltage |
VDSS |
60 |
-60 |
V |
| Gate to source voltage |
VGSS |
±20 |
±20 |
V |
| Drain current |
ID |
5 |
-5 |
A |
| Drain peak current |
ID(pulse)*1 |
20 |
20 |
A |
| Body to drain diode reverse drain current |
IDR |
5 |
-5 |
A |
| Channel dissipation |
Pch(Tc = 25)*2 |
28 |
W | |
| Channel dissipation |
Pch*2 |
4 |
W | |
| Channel temperature |
Tch |
150 |
C | |
| Storage temperature |
Tstg |
55 to +150 |
C | |