4N35M

Transistor Output Optocouplers Optocoupler Phototransistor

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SeekIC No. : 0097725 Detail

4N35M: Transistor Output Optocouplers Optocoupler Phototransistor

floor Price/Ceiling Price

US $ .16~.31 / Piece | Get Latest Price
Part Number:
4N35M
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.31
  • $.25
  • $.18
  • $.16
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/3/28

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Product Details

Quick Details

Input Type : DC Maximum Collector Emitter Voltage : 30 V
Maximum Collector Emitter Saturation Voltage : 0.3 V Isolation Voltage : 5300 Vrms
Maximum Forward Diode Voltage : 1.5 V Maximum Power Dissipation : 250 mW
Maximum Operating Temperature : + 100 C Minimum Operating Temperature : - 55 C
Package / Case : PDIP-6 Packaging : Bulk    

Description

Current Transfer Ratio :
Maximum Collector Current :
Minimum Operating Temperature : - 55 C
Maximum Forward Diode Voltage : 1.5 V
Maximum Operating Temperature : + 100 C
Maximum Collector Emitter Saturation Voltage : 0.3 V
Maximum Power Dissipation : 250 mW
Packaging : Bulk
Input Type : DC
Maximum Collector Emitter Voltage : 30 V
Isolation Voltage : 5300 Vrms
Package / Case : PDIP-6


Description

The 4N35M is designed as one kind of general purpose 6-pin phototransistor optocoupler device that can be used in (1)power supply regulators; (2)digital logic inputs; (3)microprocessor inputs applications. And this 4N35M consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin dual in-line package.

The absolute maximum ratings of the 4N35M can be summarized as:(1)Storage Temperature: -55 to +150 °C;(2)Operating Temperature: -55 to +100 °C;(3)Wave solder temperature: 260 for 10 sec °C;(4)Total Device Power Dissipation @ TA=25°C: 250 mW;(5)Derate above 25°C: 2.94 mW;(6)DC/Average Forward Input Current: 60 mA;(7)Reverse Input Voltage: 6 V;(8)Forward Current - Peak (300s, 2% Duty Cycle): 3 A;(9)LED Power Dissipation @ TA=25°C: 120 mW;(10)Derate above 25°C: 1.41 mW/°C. If you want to know more information about the 4N35M, please download the datasheet in www.seekic.com or www.chinaicmart.com .




Parameters:

Technical/Catalog Information4N35M
VendorLite-On Inc
CategoryIsolators
Isolation Voltage3550Vrms
Input TypeDC
Output TypeTransistor with Base
Current - Output/Channel100mA
Voltage - Output30V
Vce Saturation (Max)300mV
Current Transfer Ratio (Min)100% @ 10mA
Mounting TypeThrough Hole
Package / Case6-DIP
PackagingTube
Number of Circuits1 - Single
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names 4N35M
4N35M
4N35MLT ND
4N35MLTND
4N35MLT



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