4N35V

Transistor Output Optocouplers Phototransistor Out Single CTR >100%

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4N35V Picture
SeekIC No. : 0097329 Detail

4N35V: Transistor Output Optocouplers Phototransistor Out Single CTR >100%

floor Price/Ceiling Price

US $ .13~.17 / Piece | Get Latest Price
Part Number:
4N35V
Mfg:
Vishay Semiconductors
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $.17
  • $.16
  • $.16
  • $.13
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/3/27

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Product Details

Quick Details

Input Type : DC Maximum Collector Emitter Voltage : 32 V
Maximum Collector Emitter Saturation Voltage : 0.3 V Isolation Voltage : 5000 Vrms
Current Transfer Ratio : 150 % Maximum Forward Diode Voltage : 1.4 V
Maximum Collector Current : 50 mA Maximum Power Dissipation : 250 mW
Maximum Operating Temperature : + 100 C Minimum Operating Temperature : - 55 C
Package / Case : PDIP-6 Packaging : Tube    

Description

Isolation Voltage : 5000 Vrms
Minimum Operating Temperature : - 55 C
Packaging : Tube
Maximum Operating Temperature : + 100 C
Maximum Collector Emitter Voltage : 32 V
Maximum Collector Emitter Saturation Voltage : 0.3 V
Maximum Collector Current : 50 mA
Maximum Power Dissipation : 250 mW
Input Type : DC
Maximum Forward Diode Voltage : 1.4 V
Package / Case : PDIP-6
Current Transfer Ratio : 150 %


Features:

*BSI: BS EN 41003, BS EN 60095 (BS 415), BS EN 60950 (BS 7002), Certificate number 7081 and 7402
*FIMKO (SETI): EN 60950, Certificate number 12399
*Underwriters Laboratory (UL) 1577 recognized,file number E-76222
*VDE 0884, Certificate number 94778
VDE 0884 related features:

*Rated impulse voltage (transient overvoltage) VIOTM = 6 kV peak
*Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV
*Rated isolation voltage (RMS includes DC) VIOWM = 600 VRMS (848 V peak)
*Rated recurring peak voltage (repetitive) VIORM= 600 VRMS
*Creepage current resistance according to VDE 0303/IEC 112
Comparative Tracking Index: CTI = 275

*Thickness through insulation 0.75 mm
General features:
*Isolation materials according to UL94-VO
*Pollution degree 2 (DIN/VDE 0110 part 1 resp. IEC 664)
*Climatic classification 55/100/21 (IEC 68 part 1)
*Special construction: Therefore, extra low coupling capacity of typical 0.2 pF, high Common Mode Rejection
*Low temperature coefficient of CTR
*Coupling System A






Application

Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation):
For appl. class I IV at mains voltage 300 V
For appl. class I III at mains voltage 600 V according to VDE 0884, table 2, suitable for:
Switch-mode power supplies, line receiver,computer peripheral interface, microprocessor system interface.





Specifications

Parameter Test Conditions Symbol Value Unit
Reverse voltage VR 5 V
Forward current IF 60 mA
Forward surge current tp 10s IFSM 3 A
Power dissipation Tamb 25°C PV 100 mW
Junction temperature Tj 125 °C





Description

The 4N35V consists of a photo-transistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package.

The elements of 4N35V are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safety requirements.






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