Current Transfer Ratio
:
Maximum Collector Current
:
Maximum Collector Emitter Voltage
: 80 V
Minimum Operating Temperature
: - 55 C
Maximum Forward Diode Voltage
: 1.5 V
Maximum Operating Temperature
: + 100 C
Packaging
: Bulk
Maximum Power Dissipation
: 300 mW
Input Type
: DC
Isolation Voltage
: 5300 Vrms
Maximum Collector Emitter Saturation Voltage
: 1 V
Package / Case
: PDIP-6
Features:
High voltage:
MOC8204M, BV CER = 400V
H11D1M, H11D2M, BV CER = 300V
H11D3M, BV CER = 200V
High isolation voltage:
7500 V AC peak, 1 second
Underwriters Laboratory (UL) recognized
File # E90700, Volume 2ApplicationPower supply regulators
Digital logic inputs
Microprocessor inputs
Appliance sensor systems
Industrial controlsPinout
Specifications
| Symbol |
Parameter |
Device |
Value |
Units |
| TOTAL DEVICE |
| TSTG |
Storage Temperature |
All |
-55 to +150 |
|
| TOPR |
Operating Temperature |
All |
-40 to +100 |
|
| TSOL |
Lead Solder Temperature (Wave Solder) |
All |
260 for 10 sec |
|
| PD |
Total Device Power Dissipation @ TA= 25
Derate Above 25 |
All |
260 |
mW |
| 3.5 |
mW/ |
| EMITTER |
| IF |
Forward DC Current(1) |
All |
80 |
mA |
| VR |
Reverse Input Voltage(1) |
All |
6.0 |
V |
| IF(pk) |
Forward Current Peak (1s pulse, 300pps)(1) |
All |
3.0 |
A |
| PD |
LED Power Dissipation @ TA= 25(1)
Derate Above 25 |
All |
150 |
mW |
| 1.41 |
mW/ |
| DETECTOR |
| PD |
Power Dissipation @ TA= 25
Derate linearly above 25 |
All |
300 |
mW |
| 4.0 |
mW/ |
| VCER |
Collector to Emitter Voltage(1) |
MOC8204M |
400 |
V |
| H11D1M, H11D2M |
300 |
| H11D3M |
200 |
| 4N38M |
80 |
| VCBO |
Collector Base Voltage(1) |
MOC8204M |
400 |
V |
| H11D1M, H11D2M |
300 |
| H11D3M |
200 |
| 4N38M |
80 |
| VECO |
Emitter to Collector Voltage(1) |
H11D1M, H11D2M,
H11D3M,
MOC8204M |
7 |
V |
| IC |
Collector Current (Continuous) |
All |
100 |
mA |
Note:
1. Parameters meet or exceed JEDEC registered data (for 4N38M only).DescriptionThe H11DXM, 4N38M and MOC8204M are phototransistor- type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The 4N38M is supplied in a standard plastic six-pin dual-in-line package.
Parameters: | Technical/Catalog Information | 4N38M |
| Vendor | Fairchild Optoelectronics Group |
| Category | Isolators |
| Voltage - Isolation | 5300Vrms |
| Input Type | DC |
| Output Type | Transistor with Base |
| Current - Output / Channel | 100mA |
| Voltage - Output | 80V |
| Vce Saturation (Max) | 1V |
| Current Transfer Ratio (Min) | 20% @ 10mA |
| Mounting Type | Through Hole |
| Package / Case | 6-DIP Wide |
| Packaging | Tube |
| Number of Circuits | 1 - Single |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | 4N38M
4N38M
|
4N38M Data Sheet
