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4N600

Features: * Critical DC Electrical parameters specified at elevated Temp. * Rugged internal source-drain diode can eliminate the need for external Zener diode transient suppresser * Super high density cell design for extremely low RDS(ON) Specifications Symbol Parameter Max Unit ID (...

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SeekIC No. : 004231840 Detail

4N600: Features: * Critical DC Electrical parameters specified at elevated Temp. * Rugged internal source-drain diode can eliminate the need for external Zener diode transient suppresser * Super high densi...

4N600 Data Sheet

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Part Number:
4N600
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

*  Critical DC Electrical parameters specified at elevated Temp.
*  Rugged internal source-drain diode can eliminate the need for external Zener diode transient suppresser 
*  Super high density cell design for extremely low RDS(ON) 


Specifications

Symbol Parameter Max Unit
ID (TC=25)
ID (TC=100) 		Drain Current 4.0
2.5 		A
-Continues
-Pulsed 16
VGSV Gate Source Voltage ±20
PD Total Power Dissipation @ T =25 75 V
Derate above 25 0.59 W
TJ Operating and Storage -55 to 150 W/
TSTG Temperature Range



Description

  The Bay Linear n-channel power field effect transistors 4N600 are produced using high cell density DMOS technology , These  4N600 are particularly suited for high voltage applications such as automotive and other battery powered circuits where fast switching, low in-line power loss and resistance to transistors are needed.  
 
 
  The TO-220 is offered in a 3-pin is universally preferred for all commercial-industrial applications at power dissipation level to approximately to 50 watts. Also, available in a D2 surface mount power package with a power dissipation up to 2 Watts 
 




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