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50MT060WHA

Features: • Gen. 4 Warp Speed IGBT Technology• HEXFRED TM Antiparallel Diodes with traSoft Reverse Recovery• Very Low Conduction and Switching Losses• Optional SMD Thermistor (NTC)• Al2O3 DBC• Very Low Stray Inductance Design for gh Speed Operation• UL E78...

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SeekIC No. : 004232185 Detail

50MT060WHA: Features: • Gen. 4 Warp Speed IGBT Technology• HEXFRED TM Antiparallel Diodes with traSoft Reverse Recovery• Very Low Conduction and Switching Losses• Optional SMD Thermistor...

50MT060WHA Data Sheet

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Part Number:
50MT060WHA
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/30

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Product Details

Description



Features:

• Gen. 4 Warp Speed IGBT Technology
• HEXFRED TM Antiparallel Diodes with
  traSoft Reverse Recovery
• Very Low Conduction and Switching Losses
• Optional SMD Thermistor (NTC)
• Al2O3 DBC
• Very Low Stray Inductance Design for
  gh Speed Operation
• UL E78996 approved


Specifications

VCES Collector-to-Emitter Voltage .................................................600 V
IC Continuos Collector Current @ TC = 25°C................................. 114 A
@ TC = 109°C .....................................................................................50
ICM Pulsed Collector Current 350
ILM Peak Switching Current 350
I F Diode Continuous Forward Current @ TC = 109°C....................... 34A
IFM Peak Diode Forward Current 200
VGE Gate-to-Emitter Voltage ........................................................± 20 V
VISOL RMS Isolation Voltage, Any Terminal to Case, t = 1 min...... 2500
PD Maximum Power Dissipation @ TC = 25°C ..............................658 W
@ TC = 100°C ..................................................................................263


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