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5215L

Features: • Very low standby current• CMOS compatible input• Improved electromagnetic compatibility (EMC)• Fast demagnetization of inductive loads• Stable behaviour at undervoltage• Wide operating voltage range• Logic ground independent from load groundApp...

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SeekIC No. : 004232572 Detail

5215L: Features: • Very low standby current• CMOS compatible input• Improved electromagnetic compatibility (EMC)• Fast demagnetization of inductive loads• Stable behaviour at ...

5215L Data Sheet

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Part Number:
5215L
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Very low standby current
• CMOS compatible input
• Improved electromagnetic compatibility (EMC)
• Fast demagnetization of inductive loads
• Stable behaviour at undervoltage
• Wide operating voltage range
• Logic ground independent from load ground


Application

• µC compatible high-side power switch with diagnostic feedback for 12V and 24V grounded loads in industrial applications
• All types of resistive, inductive and capacitve loads
• Most suitable for loads with high inrush currents, so as lamps
• Replaces electromechanical relays, fuses and discrete circuits




Pinout

Connection Diagram


Specifications

Parameter Symbol Values Unit
Supply voltage (overvoltage protection see page 5) Vbb 43 V
Supply voltage for full short circuit protection
Tj,start = -40 ...+150		 Vbb 36 V
Load current (Short-circuit current, see page 6) IL self-limited A
Load dump protection1) VLoadDump = VA + Vs, VA = 13.5 V
RI2) = 2 , td = 400 ms; IN = low or high,
each channel loaded with RL = 13.5 ,		 VLoad dump3) 60 V
Junction temperature
Operating temperature range
Storage temperature range		 Tj
Ta
Tstg		 +150
-30 ...+85
-40 … +105
Power dissipation (DC)4) Ta = 25:
(all channels active) Ta = 85:		 Ptot 3.1
1.6		 W
Maximal switchable inductance, single pulse
Vbb = 12V, Tj,start = 150°C4), see diagrams on page 9
IL = 3.5 A, EAS = 178 mJ, 0 one channel:
IL = 7.0 A, EAS = 337 mJ, 0 two parallel channels:		 ZL 21.3
10		 mH
Electrostatic discharge capability (ESD) IN:
(Human Body Model) ST:
out to all other pins shorted:
acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993
R=1.5k; C=100pF		 VESD 1.0
4.0
8.0		 kV
Input voltage (DC) see internal circuit diagram page 8
Current through input pin (DC)
Pulsed current through input pin5)
Current through status pin (DC)		 VIN
IIN
IINp
IST		 -10 ... +16
±0.3
±5.0
±5.0		 V
mA

1) Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150
resistor for the GND connection is recommended.
2) RI = internal resistance of the load dump test pulse generator
3) VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
4) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70m thick) copper area for Vbb connection. PCB is vertical without blown air. See page 13
5) only for testing




Description

• N channel vertical power MOSFET 5215L with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology.
• Providing embedded protective functions




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