5SNA 1800E170100

Features: SpecificationsDescription The 5SNA 1800E170100 is designed as IGBT module. 5SNA 1800E170100 has six features.The first one is that it would have low-loss, rugged SPT chip-set.The second one is that it would have smooth switching SPT chip-set for good EMC.The third one is that it would be...

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SeekIC No. : 004234656 Detail

5SNA 1800E170100: Features: SpecificationsDescription The 5SNA 1800E170100 is designed as IGBT module. 5SNA 1800E170100 has six features.The first one is that it would have low-loss, rugged SPT chip-set.The second on...

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Part Number:
5SNA 1800E170100
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/3/27

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Product Details

Description



Features:






Specifications






Description

      The 5SNA 1800E170100 is designed as IGBT module.
      5SNA 1800E170100 has six features.The first one is that it would have low-loss, rugged SPT chip-set.The second one is that it would have smooth switching SPT chip-set for good EMC.The third one is that it would be industry standard packaged.The fourth one is that it would have high power density.The fifth one is that it would have AlSiC base-plate for high power cycling capability.The last one is that it would have AlN substrate for low thermal resistance.That are all the features.
      Some maximum rated values about 5SNA 1800E170100 have been concluded into several points as follow.The first one is about its collector emitter voltage which would be 1700V with condition of Vge= 0 V, Tvj >= 25 °C.The second one is about its DC collector current which would be 1800A with condition of Tc = 80 °C.The third one is about its peak collector current which would be 3600A with condition of tp =1 ms, Tc =80 °C.The fourth one is about its gate emitter voltage which would be min -20 and max 20 V.The fifth one is about its total power dissipation which would be 11000W with condition of Tc = 25 °C, per switch (IGBT).The sixth one is about its DC forward current which would be 1800 A.The seventh one is about its peak forward current which would be 3600 A.The eighth one is about its surge current which would be 16500A with condition of Vr= 0 V, Tvj = 125 °C, tp = 10 ms, half-sinewave.The ninth one is about its IGBT short circuit SOA which would be 10 s with condition of Vcc= 1200 V, Vcem chip <= 1700 V, Vge<= 15 V, Tvj<= 125 °C.The next one is baout its isolation voltage which would be 4000V with condition of 1 min, f = 50 Hz.The next one is about its junction temperature which would be 150 °C.The next one is about its junction operating temperature which would be from -40 to 125 °C.The next one is about its case temperature which would be from -40 to 125 °C.The next one is about its storage temperature which would be also from -40 to 125 °C.The last one is about its mounting torques which would be min 4Nm and max 6Nm with condition of base-heatsink, M6 screws and would be min 8Nm and max 10Nm with condition of main terminals, M8 screws and would be min 2Nm and 3Nm with condition of auxiliary terminals, M4 screws.And so on.
      For more information about 5SNA 1800E170100 please contact us.






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