5STB18N4200

5STB18N4200 is a type of bi-directional control thyristor which has five unique features: The first one is two thyristors integrated into one wafer. The second one is patented free-floating silicon technology. The third one is it is designed for traction, energy and industrial applications.The forth one is optimum power handling capability. The last one is interdigitated amplifying gate.

There are some specifications about 5STB18N4200.VSM is 4200 V.ITAVM is 1920 A.ITRMS is 3020 A.ITSM is 32000 A.VT0 is 0.96V.rT is 0.285 m.Mounting force (FM) is 81kN min, 90 kNtyp and 108 kN max.Acceleration (a) is (Device unclamped) 50 m/s2.Acceleration (a) is( Device clamped) 100 m/s2.Weight(m) is 2.9 kg typ.Surface creepage distance(DS) is 53 mm min.Air strike distance (Da) is 22 mm min.On-state:Max. average on-state current(ITAVM)( Half sine wave, Tc = 70°C) is 1920 A max.Max.RMS on-state current (ITRMS)( Half sine wave, Tc = 70°C) is 3020 A max.Max. peak non-repetitive surge current(ITSM)(tp = 10 ms, Tj = 125°C, VD=VR = 0 V) is 32000 A max.Limiting load integral(I2t)(tp = 10 ms, Tj = 125°C, VD=VR = 0 V) is 5120 kA2s max.Limiting load integral(I2t)(tp = 8.3 ms, Tj = 125°C,VD=VR=0 V) is 5120 kA2s max.

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