5STP 26N6500

      5STP 26N6500 is a kind of unique phase control thyristor with three highlights: The first one is it uses patented free-floating silicon technology. The second one is its low on-state and switching losses. The third one is that it is designed for traction, energy and industrial applications. At the same time , there are some other important information about it : V_DSM is 6500 V;I_TAVM is  2810 A; I_TRMS is 4410 A;I_TSM is 45000 A;V_T0 is 1.12V; r_T is 0.29 m.
      At the same time , there are some mechanical data about 5STP 26N6500. Mounting force(F_M) is 81 KN min , 90 KN typ and 108 KN max. Acceleration(a) is 50 m/s2 max when the device is uncalmped and is 100 m/s2 max when the device is clamed. Weight(m) is 2.9 Kg typ. Surface creepage distance (D_s) is 56 mm min. Air strike distance (D_a) is 22 mm min. Max.average on-state current (I_T(AV)M) is 2810 A under the condition of half sine wave and Tc is 70°C.RMS on-state current (T_(RMS) ) is 4410 A under the condition of half sine wave and Tc is 70°C. On-state voltage (V_T) is 2 V max under the condition that IT is 3000 A and Tj is 125°C. Threshold voltage (V_TO) is 1.12 V max under the condition that IT is 1300 A - 4000 A and Tj is 125 °C. Slope resisitance (r_T) is 0.29 m max under the condition that Tj is 125 °C. Holding current (I_H ) is 125 mA max when the T_j is 25 °C amd is 75 mA max when the T_j is 125 °C. Latching current (I_L) is 500 mA max when the T_j is 125 °C and 250 mA max when the Tj is 125 °C. Peak forward gate voltage is 12 V max . Peak forward gate current is 10 A max. Peak reserve gate voltage is 10 V max. Mean forward gate power is 3 W max. Gate-trigger voltage is 2.6 V max when the Tj is 25°C . Gate-trigger current is 400 mA max when the Tj is 25°C . Operating junction temperature range is 125°C max. Storage temperature range is from  -40°C to 140°C. 
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