5STP 52U5200

      The 5STP 52U5200 is a kind of phase control thyristor. The following is about the features of 5STP 52U5200. First,it uses patented free-floating silicon technology.Secondly, it has low on-state and switching losses.Thirdly,it is designed for traction, energy and industrial applications.Fourthly,it has optimum power handling capability.At last,it has interdigitated amplifying gate.
      Here you can get some information about the maximum ratings of 5STP 52U5200. The V_DSM is 5200 V.V_DRM = 4400 V.The I_T(AV)M is 4120 A.The I_T(RMS) is 6470 A.The ITSM is 85200 A.The V_T0 is 1.04 V.The r_T is 0.115 m .The V_DRM (V_RRM) is 4400 V at f = 50 Hz, t_p = 10ms.The V_RSM (V_DSM) is 5700 V at f=5 HZ,t_p = 5 ms, single pulse.The dV/dt_crit is 2000 V/s at Exp. to 0.67 x V_DRM, T_vj = 110.The Max I_DSM (Forward leakage current) is 600 mA at V_DSM, T_vj = 110.The Max I_RSM (Reverse leakage current) is 600mA at V_RSM, T_vj = 110.The I_TAVM (Max. average on-state current) is 4120 A and the I_TRMS (Max. RMS on-state current) is 6470 A under the condition of half sine wave, T_C = 70.Under the condition that T_vj = 110,V_D = V_R = 0 V, t_p=10 ms, the I_TSM (Max. peak non-repetitive) is 85.2*10³ A and the I²t (Limiting load integral) is 36.28*10⁶ A²s.Under the condition that T_vj = 110,V_D = V_R = 0 V, t_p=8.3 ms, the I_TSM  is 90.3*10³ A and the I²t is 33.85*10⁶ A²s.The Max V_T (On-state voltage) is 1.38 V at I_T = 3000 A,T_vj = 110.The V_T0 (Threshold voltage) is 1.04 V and the r_T (Slope resistance) is 0.115 m at I_T = 2000 - 6000 A,T_vj = 110.The Max I_H (Holding current) is 200 mA at T_vj = 25 and 100 mA at T_vj = 110.The Max I_L (Latching current) is 900 mA at T_vj = 25 and 700 mA T_vj = 110 .