60N75 Selling Leads, Price trend, 60N75 DataSheet download, circuit diagram from SeekIC.com

Features: ·RDS(ON) = 16m @VGS= 10 V·Ultra low gate charge ( typical 90 nC ) ·Low reverse transfer Capacitance ( CRSS= typical 80pF ) ·Fast switching capability ·Avalanche energy Specified ·Improved dv/dt capability, high ruggedness Specifications PARAMETER SYMBOL RATINGS UNIT ...

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SeekIC No. : 004235031 Detail

60N75: Features: ·RDS(ON) = 16m @VGS= 10 V·Ultra low gate charge ( typical 90 nC ) ·Low reverse transfer Capacitance ( CRSS= typical 80pF ) ·Fast switching capability ·Avalanche energy Specified ·Improved ...

60N75 Data Sheet

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Part Number:: 60N75
Supply Ability:: 5000

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1~5000

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Upload time: 2024/4/27

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Description

Features:

·R_DS(ON) = 16m @VG_S= 10 V
·Ultra low gate charge ( typical 90 nC )
·Low reverse transfer Capacitance ( C_RSS= typical 80pF )
·Fast switching capability
·Avalanche energy Specified
·Improved dv/dt capability, high ruggedness

Specifications

PARAMETER		SYMBOL	RATINGS	UNIT
Drain to Source Voltage		V_DSS	75	V
Continuous Drain Current	T_C=25	I_D	60	A
Continuous Drain Current	T_C=100	I_D	56	A
Drain Current Pulsed (Note 1) Gate to Source Voltage		I_DM V_GS	300 20	A v
Avalanche Energy	Single Pulsed(Note 2)	E_AS	900	mJ
Avalanche Energy	Repetitive (Note 1)	E_AR	300	mJ
Peak Diode Recovery dv/dt (Note 3)		dv/dt	15	V/ns
Total Power Dissipation	T_C = 25	P_D	220	W
Total Power Dissipation	Derating above 25	P_D	1.4	W
Junction Temperature Operating Temperature Storage Temperature		T_JT_OPR T_STG	+150 -55~+150 -55~+150

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.

Description

The UTC 60N75 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed, low thermal resistance, usually used at telecom and computer application.

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60N75

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