6431

Features: - High slew rate 300V/uS- High unity gain freq 50MHz- Low supply current 5mA- Fast settling 120nS to 0.1%- Low differential gain <0.1%- Low differential phase 0.1 degrees- Wide supply range 4.75V to 32V- Stable with unlimited capacitive load- Well behaved; easy to apply- SMD : 5962-89...

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6431 Picture
SeekIC No. : 004237108 Detail

6431: Features: - High slew rate 300V/uS- High unity gain freq 50MHz- Low supply current 5mA- Fast settling 120nS to 0.1%- Low differential gain <0.1%- Low differential phase 0.1 degrees- Wide supply r...

floor Price/Ceiling Price

Part Number:
6431
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Description



Features:

- High slew rate                                                 300V/uS
- High unity gain freq                                          50MHz
- Low supply current                                             5mA
- Fast settling                                                  120nS to 0.1%
- Low differential gain                                           <0.1%
- Low differential phase                                     0.1 degrees
- Wide supply range                                          4.75V to 32V
- Stable with unlimited capacitive load
- Well behaved; easy to apply
- SMD : 5962-89621012A*,VPA**,PA***,HA****,VXA*****,XA******



Application

- Video amplifier
- High-frequency filter
- Wide-bandwidth signal conditioning
- Radar
- Sonar



Specifications

Supply Voltage
                                                       (V+ - V-) 36V
Differential Input Voltage Range
(Note 4)
                                                       ±8V
Common-Mode Voltage Range
(Note 6)
                                                       (V+ - 0.7V) to (V- - 7V)
Output Short Circuit to Gnd
(Note 3)
                                                       Continuous
Power Dissipation
(Note 2)
400mW
Soldering Information
(Soldering, 10 seconds)                  260 C
Storage Temperature Range
                                                       -65 C to +150 C
Maximum Junction Temperature
                                                       150 C
Thermal Resistance
ThetaJA
LCC (Still Air)                                    90 C/W
(500LF/Min Air flow)                        
 61 C/W
CERDIP (Still Air)                              113 C/W
(500LF/Min Air flow)                         51 C/W
CERPAK (Still Air)                              228 C/W
(500LF/Min Air flow)                         140 C/W
CERAMIC SOIC (Still Air)                   228 C/W
(500LF/Min Air flow)                         140 C/W
ThetaJC
LCC                                                  20 C/W
CERDIP                                             21 C/W
CERPAK                                            21 C/W
CERAMIC SOIC                                 21 C/W
ESD Tolerance
    (Note 4, 5)
                                                        ±500V
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur.Operating Ratings indicate conditions for which the device is functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The guaranteed specifications apply only for the test conditions listed. Some performance characteristics may degrade when the device is not operated under the listed test conditions.

Note 2: The maximum power dissipation must be derated at elevated temperatures and is dictated by Tjmax (maximum junction temperature), ThetaJA (package junction to ambient thermal resistance), and TA (ambient temperature). The maximum allowable power dissipation at any temperature is Pdmax = (Tjmax - TA)/ThetaJA or the number given in the Absolute Maximum Ratings, whichever is lower.

Note 3: Continuous short-circuit operation at elevated ambient temperature can result in exceeding the maximum allowed junction temperature of 150 C.

Note 4: In order to achieve optimum AC performance, the input stage was designed without protective clamps. Exceeding the maximum differential input voltage results in reverse breakdown of the base-emitter junction of one of the input transistors and probable degradation of the input parameters (especially Vio, Iio and Noise).

Note 5: The average voltage that the weakest pin combinations (those involving Pin 2 or Pin 3) can withstand and still conform to the datasheet limits. The test circuit used consists of the human body model of 100pF in series with 1500 Ohms.

Note 6: The voltage between V+ and either input pin must not exceed 36V.




Description

The 6431 high-speed amplifier exhibits an excellent speed-power product in delivering 300 V/uS and 50 MHz unity gain stability with only 5 mA of supply current. Further, power savings and application convenience are possible by taking advantage of the wide dynamic range in operating supply voltage which extends all the way down to +5V.

This amplifier 6431 is built with National's VIP[TM] (Vertically Integrated PNP) process which provides fast PNP transistors that are true complements to the already fast NPN devices.

This advanced junction-isolated process of 6431 delivers high speed performance without the need for complex and expensive dielectric isolation.




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