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66191

Features: Current transfer ratio: 150% typicalBase lead provided for conventional transistorbiasingLow power consumptionHigh radiation immunity1000 Vdc isolation test voltageApplication Military and SpaceHigh Reliability Systems Voltage Level ShiftingIsolated Receiver InputsCommunication SystemsS...

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66191: Features: Current transfer ratio: 150% typicalBase lead provided for conventional transistorbiasingLow power consumptionHigh radiation immunity1000 Vdc isolation test voltageApplication Military an...

66191 Data Sheet

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Part Number:
66191
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

  Current transfer ratio: 150% typical
 Base lead provided for conventional transistorbiasing
 Low power consumption
 High radiation immunity
 1000 Vdc isolation test voltage
 


Application

  Military and Space
 High Reliability Systems
  Voltage Level Shifting
 Isolated Receiver Inputs
 Communication Systems


Specifications

Storage Temperature..................................................................................................................-55 to +150
Operating Free-Air Temperature Range.......................................................................................-55 to +100
Lead Solder Temperature (10 seconds max)...............................................................................................240
Input to output Isolation Voltage.........(see Note 1) ................................................................................+1kVdc
*  Input Diode
Peak Forward Input Current....................................................................................................................... 50mA
Reverse Input Voltage......................................................................................................................................7V
Input Power Dissipation.......................(see Note 2)...................................................................................80mW
*Output Photodetector
Continuous Collector Current.......................................................................................................................50mA
Collector-Emitter Voltage.................................................................................................................................40V
Emitter-Collector Voltage...................................................................................................................................5V
Collector-Base Voltage.....................................................................................................................................40V
Power Dissipation...............................(see Note 3)....................................................................................300mW


Description

Radiation tests performed on the 66099 optocoupler have shown that the electrical performance of the device after irradiationis an order of magnitude better than the 4N49 optocouplers.  The 66191 has the same components and layout in a 6 pin,hermetically sealed leadless chip carrier package.  Figures 1 and 2 from the 66191 data sheet illustrate the radiationperformance of the device




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