6N60

Features: `RDS(ON) = 1.5 @VGS = 10V` Ultra low gate charge (typical 20 nC )`Low reverse transfer Capacitance ( CRSS = typical 10pF )`Fast switching capability`Avalanche energy tested` Improved dv/dt capability, high ruggednessSpecifications PARAMETER SYMBOL RATINGS UNIT Drain-Sour...

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6N60 Picture
SeekIC No. : 004238767 Detail

6N60: Features: `RDS(ON) = 1.5 @VGS = 10V` Ultra low gate charge (typical 20 nC )`Low reverse transfer Capacitance ( CRSS = typical 10pF )`Fast switching capability`Avalanche energy tested` Improved dv/dt...

floor Price/Ceiling Price

Part Number:
6N60
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Description



Features:

`RDS(ON) = 1.5 @VGS = 10V
` Ultra low gate charge (typical 20 nC )
`Low reverse transfer Capacitance ( CRSS = typical 10pF )
`Fast switching capability
`Avalanche energy tested
` Improved dv/dt capability, high ruggedness



Specifications

PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage 6N60-A
VDSS
600
V
6N60-B
650
Gate-Source Voltage
VGSS
±30
V
Avalanche Current (Note 1)
IAR
6.2
A
Continuous Drain Current TC = 25°C
ID
6.2
A
TC = 100°C
3.9
Pulsed Drain Current (Note 1)
IDM
24.8
A
Avalanche Energy Single Pulsed (Note 2)
EAS
440
mJ
Repetitive (Note 1)
EAR
13
Power Dissipation
PD
62.5
W
Junction Temperature
TJ
+150
Operating Temperature
TOPR
-55 ~ +150
Storage Temperature
TSTG
-55 ~ +150

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.




Description

The UTC 6N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors.




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