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70N06

Features: * RDS(ON) = 15m@VGS = 10 V* Ultra low gate charge ( typical 90 nC )* Low reverse transfer Capacitance ( CRSS = typical 80 pF )* Fast switching capability* 100% avalanche energy specified* Improved dv/dt capabilitySpecifications Characteristics PARAMETER Rating Unit Dra...

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70N06: Features: * RDS(ON) = 15m@VGS = 10 V* Ultra low gate charge ( typical 90 nC )* Low reverse transfer Capacitance ( CRSS = typical 80 pF )* Fast switching capability* 100% avalanche energy specified* ...

70N06 Data Sheet

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Part Number:
70N06
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Description



Features:

* RDS(ON) = 15m@VGS = 10 V
* Ultra low gate charge ( typical 90 nC )
* Low reverse transfer Capacitance ( CRSS = typical 80 pF )
* Fast switching capability
* 100% avalanche energy specified
* Improved dv/dt capability


Specifications

Characteristics
PARAMETER
Rating
Unit
Drain-Source Voltage
VDSS
60
V
Gate to Source Voltage
VGSS
±20
V
Continuous Drain Current TC = 25
TC = 25
ID
70
A
56
A
Drain Current Pulsed
IDM
280
A
Single Pulse Avalanche Energy
EAS
600
mJ
Repetitive Avalanche Energy
EAR
20
mJ
Peak Diode Recovery dv/dt
dv/dt
10
V/ns
Total Power Dissipation
PD
200
W
Derating Factor above 25
1.4
W/
Junction and Storage Temperature Range
Tj,Tstg
−55~150



Description

The UTC 70N06 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed, low thermal resistance, usually used at telecom and computer application.




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