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Part Number: 74AHC1G06

 

 

 

 

Description: The 74AHC1G/AHCT1G06 is a high-speed Si-gate CMOS device.The 74AHC1G/AHCT1G06 provides the inverting buffer.

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74AHC1G06 General Description


The 74AHC1G/AHCT1G06 is a high-speed Si-gate CMOS device.

The 74AHC1G/AHCT1G06 provides the inverting buffer.

The output of the 74AHC1G/AHCT1G06 devices is an open drain and can be connected to other open-drain outputs to implement active-LOW, wired-OR or active-HIGH wired-AND functions. For digital operation this device must have a pull-up resistor to establish a logic HIGH-level.

74AHC1G06 Maximum Ratings

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCC DC supply voltage   -0.5 +7.0 V
VI input voltage   -0.5 +7.0 V
IIK DC input diode current VI < -0.5 V; note 1 - -20 mA
IOK DC output clamping diode
current		 VO < -0.5 V; note 1 - ±20 mA
VO output voltage active mode; note 1 -0.5 VCC + 0.5 V
high-impedance mode; note 1 -0.5 7.0 V
IO DC output sink current VO > -0.5 V - ±25 mA
ICC DC VCC or GND current   - ±75 mA
Tstg storage temperature   -65 +150 °C
PD power dissipation per package for temperature range: -40 to +125 °C; note 2 - 200 mW
Notes
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
2. Above 55 °C the value of PD derates linearly with 2.5 mW/K.

74AHC1G06 Features

· High noise immunity
· ESD protection:
  HBM EIA/JESD22-A114-A exceeds 2000 V
  MM EIA/JESD22-A115-A exceeds 200 V
· Low power dissipation
· SOT353 package
· Output capability standard (open drain).

74AHC1G06 Connection Diagram

74AHC1G06 Connection Diagram

74AHC1G06 datasheet

74AHC1G06
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